研究成果

期刊论文（*为通讯作者）

• W. Chen, R. Cheng, D. Wang, H. Song, H. Chen, E. Li, W. Yin and Y. Zhao*.
  Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs – AC vs Circuit-Speed Random Stress.
  IEEE Transactions on Electron Devices, accepted, 2016.
• Z. Zheng, X. Yu, M. Xie, R. Cheng, R. Zhang and Y. Zhao*.
  Demonstration of Ultra-Thin Buried Oxide Germanium-on-Insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques.
  Applied Physics Letters, accepted, 2016.
• R. Zhang, J. Li, F. Chen and Y. Zhao*.
  High Performance Germanium pMOSFETs with NiGe Metal Source/Drain Fabricated by Microwave Annealing.
  IEEE Transactions on Electron Devices, accepted, 2016.
• R. Zhang, X. Tang, X. Yu, J. Li and Y. Zhao*.
  Aggressive EOT scaling of Ge pMOSFETs with HfO2/AlOx/GeOx Gate Stacks Fabricated by Ozone Post Oxidation.
  IEEE Electron Device Letters, accepted, 2016.
• W. Wu, J. Lu, C. Liu, H. Wu, X. Tang, J. Sun, R. Zhang, W. Yu, X. Wang and Y. Zhao*.
  Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs.
  Microelectronics Reliability, Vol. 62, pp. 79-81(2016).
• X. Tang, J. Lu, R. Zhang, W. Wu, C. Liu, Y. Shi, Z. Huang, Y. Kong and Y. Zhao*.
  Positive Bias Temperature Instability and Hot Carrier Injection Investigation of Back Gate Ultra-Thin-Body In0.53Ga0.47As-on-Insulator nMOSFETs.
  Chinese. Physics. Letter,Vol. 32(11), pp. 117302(2015)
• X. Ma, R. Zhang, J. Sun, Y. Shi and Y. Zhao*.
  Reduction of RIE-induced Ge surface roughness by SF6/CF4 cyclic etching for Ge Fin fabrication.
  Chinese. Physics. Letter,Vol. 32, pp. 045202(2015).
• W. Wu, X. Li, J. Sun, Y. Shi and Y. Zhao*.
  Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs with Si nMOSFETs under High Normal Electric Fields.
  IEEE Transction on Electron Devices,Vol. 62, pp. 1136-1142(2015).
• D. Zhai, J. Zhu, Y. Zhao*, Y. Cai, Y. Shi, Y. Zheng.
  High Performance Trench MOS Barrier Schottky Diode with high-k Gate Oxide.
  Chinese. Physics. B,Vol. 24, pp. 077201(2015).
• W. Wu, C. Liu, J. Sun, W. Yu, X. Wang, Y. Shi, Y. Zhao*.
  Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile Strains.
  IEEE Electron Device Letters., Vol. 35, pp.714-716(2014).
• W. Yu, W. Wu, B. Zhang, C. Liu, J. Sun, D. Zhai, Y. Yu, X. Wang, Y. Shi, Y. Zhao*and Q. T. Zhao.
  Experimental Investigation on Alloy Scattering in sSi/Si0.5Ge0.5/sSOI Quantum-Well p-MOSFET.
  IEEE Transaction on Electron Devices., Vol. 61, pp. 950-952(2014).
• J. Sun, Y. Geng, H. Lu, W. Wu, X. Ye, Z. Yang, D W. Zhang, and Y. Shi，Y. Zhao*.
  Retarded thermal oxidation of strained Si substrate.
  Chinese Physics B., vol. 23, pp. 407-410(2014).
• W. Yu, B. Zhang, C. Liu, Y. Zhao*, W. Wu, Z.Y. Xue, M. Chen, D. Buca, J.-M. Hartmann, X. Wang, Q.T. Zhao, S. Mantl.
  Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs.
  Microelectronic Engineering., vol. 113, pp. 5-9 (2014).
• L. Han, S.K. Wang*, X. Zhang, B. Q. Xue, W. R. Wu, Y. Zhao, and H.G. Liu.
  Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge.
  Chinese Physics B., vol. 23, pp. 046804-1-6(2014).
• W. Wu, Y. Pu, J. Wang, X. Xu, J. Sun, Z. Yuan,Y. Shi, and Y. Zhao*.
  Comparative study on strain induced electrical properties modulation of Si p-n junctions.
  Applied Physics Letters., Vol. 102, pp. 093502 -1-4(2013).
• X. Ye, Z. Yang, J. Sun, Y. Zhao*,Y. Shi.
  Fabricating Au micro-pattern arrays on flexible substrate with high fidelity.
  Microelectronic Engineering., vol. 105 pp. 46-50 (2013).
• J. Sun, Y. Geng, H. Lu, W. Wu, X. Ye, Z. Yang, D. W. Zhang, and Y. Shi，Y. Zhao*.
  EOT Scaling of Al2O3/Germanium(Ge) Metal-Oxide-Semiconductor Capacitors with Ozone Post Oxidation.
  Chinese Physics B., vol. 22, pp. 067701-1-4(2013).
• W. Wu, Y. Pu, J. Sun, Y. Zhao*, Y. Shi.
  Mechanical tensile strain induced gate and substrate currents change in n and p-channel metal-oxide-semiconductor field-effect transistors.
  Applied Physics Letters.,vol. 101, pp. 053507 -1-3(2012).
• Y. Zhao*.
  Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices.
  Materials.,vol. 5, pp. 1413-1438(2012).

国际会议（*为通讯作者）

• W. Wu, H. Wu, M. Si, N. Conrad, Y. Zhao and P. D. Ye*.
  RTN and Low Frequency Noise on Ultra-scaled Near-ballistic Ge Nanowire nMOSFETs.
  2016 Symposia on VLSI (VLSI).,2016 Hawaii, USA.
• （邀请报告）Y. Zhao*, R. Zhang.
  Gate Stack Engineering of Germanium Based Devices for Advanced CMOS Technologies.
  The American Vacuum Society (AVS) Shanghai Thin Film Conference.,2015 Shanghai, China.
• J. Li, C. Liu, Z. Zhang, R. Zhang, J. Lu, K. Chen and Y. Zhao*.
  High Performance of Ge Ultra-Shallow Junctions Fabricated by Spin-on Dopant and Laser Annealing.
  The American Vacuum Society (AVS) Shanghai Thin Film Conference.,2015 Shanghai, China.
• X. Tang, W. Wu, C. Liu, J. Lu, R. Zhang, Y. Shi and Y. Zhao*.
  PBTI and HCI Degradation of Ultrathin Body InGaAs-on-Insulator nMOSFETs Fabricated by Wafer Bonding.
  IEEE International Reliability Physics Symposium (IRPS).,2015 California, USA
• （邀请报告）R. Zhang, Y. Zhao*.
  Plasma Post‐Oxidation of Ultrathin ALD High‐k/Ge Structures for Advanced Gate Stacks in High Mobility Ge CMOS Devices.
  The 2nd International Conference on ALD Applications & 3rd China ALD Conference.,2014 Shanghai, China.
• W. Wu, C. Liu, J. Sun, Y. Shi and Y. Zhao*.
  Comprehensive Experimental Study on Impacts of Compressive and Tensile Strains on NBTI Degradation Behaviors in Si pMOSFETs.
  IEEE International Reliability Physics Symposium (IRPS).,2014 Hawaii, USA.
• J. Sun, R. Zhang, W. Wu, Y. Shi and Y. Zhao*.
  Mobility Enhancement and Slow Traps Reduction in Interfacial Layer-Free Al₂O₃/Ge pMOSFETs with Ozone Post Annealing.
  IEEE Semiconductor Interface Specialists Conference (SISC)., 2013 Arlington, VA, USA.
• (邀请报告)Y. Zhao*, W. Wu, J. Sun and Y. Shi.
  Strain-induced I-V Characteristics Modulation of p-n Junctions and MOS Capacitors in Si CMOS Devices.
  IEEE International Workshop on Junction Technology (IWJT)., 2013 Kyoto, Japan.
• W. Wu, W. Yu, Q. T. Zhao, J. Sun1, D. Zhai, Y. Shi and Y. Zhao*.
  Effect of Alloy Scattering on Hole Mobility of sSi/sSiGe/sSOI Quantum Well pMOSFETs.
  International Conference on Solid State Devices and Materials (SSDM)., 2013 Tsukuba Japan.
• J. Sun, Y. Geng, H. Lu, W. Wu, X. Ye, Z. Yang, Y. Zhao*, and Yi Shi.
  Interface Stabilizing and EOT Scaling of Al₂O₃/Ge Gate Stack with Ozone Post-Oxidation without Additional Interface Layer Formation,
  International Conference on Solid State Devices and Materials (SSDM). ,2012 Kyoto Japan.
• W. Wu, J. Sun, Y. Shi, Y. Zhao*.
  Electrical properties of strained Si p-n junctions.
  11th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT).,2012 Xi’an, China.
• G. Wang, Y. Zhao, Y. Shi.
  Self-diffuse Nanostructures on Silicon Surfaces through Rapid Annealing at High Temperatures.
  11th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)., 2012 Xi’an, China.
• W. Wu, J. Sun, Y. Zhao*.
  “Mechanical strain altered gate and substrate currents in n and p-channel MOSFETs”.
  International Meeting for Future of Electron Devices., 2012, Kansai, Japan.

著书

• 赵毅，王文武，用于先进集成电路的高k栅极介质，科学出版社（预定2015年10月出版）。

专利

• Yi Zhao, Yi Shi and Xiangdong Ye.
  Flexible Memory and its Fabrication.
  专利号：US 2014/0169081 A1